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Ion Implantation and Synthesis of Materials (Springer Series in Materials Science) download epub

by Michael Nastasi,James W. Mayer


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Authors: Nastasi, Michael, Mayer, James . Bibliographic Information. Ion Implantation and Synthesis of Materials.

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. Ion beam processing can also be used to improve corrosion resistance.

This book presents the physics and materials science of ion implantation and ion beam modification of. .Michael Nastasi, James W. Mayer.

This book presents the physics and materials science of ion implantation and ion beam modification of materials. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described. Ion implantation is one of the key processing steps in silicon integrated circuit technology. Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B10C2+x:Hy) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode.

Автор: Michael Nastasi; James W. Mayer Название: Ion Implantation . Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described

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Nastasi, Michael; Mayer, James W. Ion Implantation and Synthesis of Materials (Springer Series in Materials Science). ISBN 13: 9783540236740. Topics important for materials modification topics, such as ion-beam mixing, stresses, and sputtering, are also described.

Ion implantation is one of the key processing steps in silicon integrated circuit technology. Some integrated circuits require up to 17 implantation steps and circuits are seldom processed with less than 10 implantation steps. Controlled doping at controlled depths is an essential feature of implantation. Ion beam processing can also be used to improve corrosion resistance, to harden surfaces, to reduce wear and, in general, to improve materials properties. This book presents the physics and materials science of ion implantation and ion beam modification of materials. It covers ion-solid interactions used to predict ion ranges, ion straggling and lattice disorder. Also treated are shallow-junction formation and slicing silicon with hydrogen ion beams. Topics important for materials modification, such as ion-beam mixing, stresses, and sputtering, are also described.
Ion Implantation and Synthesis of Materials (Springer Series in Materials Science) download epub
Medicine
Author: Michael Nastasi,James W. Mayer
ISBN: 3540236740
Category: Medical Books
Subcategory: Medicine
Language: English
Publisher: Springer; 2006 edition (September 25, 2006)
Pages: 263 pages