Wide Gap II-VI Semiconductors, Proceedings of the E-MRS Advanced Research Workshop, Montpellier, 16-18 January 1991 download epub
by R. Triboulet,R. L. Aulombard,J. B. Mullin
These proceedings will stimulate ideas and interest for the future development of the wide bandgap II-VI compounds and major new device applications.
Adam Hilger, Bristol, 1991); Semiconductor Sci. Technol.
Wide-Bandgap II-VI Semiconductors", c. 260 pages. NATO ARW 16-18 January 1991. R Triboulet, R L Aulombard and J B Mullin. Wide-Bandgap Semiconductors. (Adam Hilger, UK, 1991). for High-Power, High Frequency and High Temperature Applications - 1999". 1999 MRS Spring Meeting.
Compound semiconductors, Congresses, Crystal growth, Wide gap semiconductors.
A new family of wide band gap nitride semiconductors expressed as II–IV-N2 have recently attracted attention due to their expected properties such as optical non-linearity. In addition, among these compounds, ZnGeN2 and ZnSiN2 have lattice parameters close to GaN and SiC respectively. Up to now, there is very little work reported on this class of materials and no systematic thin film growth study has been reported to date.
Nitrides and Related Wide Band Gap Materials Published: 18th December 1997 Authors: B. Gil . Cavenett . Selected Topics in Group IV and II-VI Semiconductors.
Nitrides and Related Wide Band Gap Materials. Published: 11th August 1999 Authors: A. Hangleiter . Y. Published: 18th December 1997 Authors: B. Aulombard G. Leising F. Stelzer Robert Triboulet. Volume 55. Laser Ablation. Volume 53. Ion Beam Processing of Materials and Deposition Processes of Protective Coatings. Parker Peter Rudolph G. Müller-Vogt Robert Triboulet Erwin Kasper.
Proceedings of SPIE 0277-786X, V. 10512. The papers reflect the work and thoughts of the authors and are published herein as submitted
Proceedings of SPIE 0277-786X, V. SPIE is an international society advancing an interdisciplinary approach to the science and application of light. The papers reflect the work and thoughts of the authors and are published herein as submitted. The publisher is not responsible for the validity of the information or for any outcomes resulting from reliance thereon.
Cubic ZnTe and MgTe are both direct band gap semiconductors, and .
Cubic ZnTe and MgTe are both direct band gap semiconductors, and calculated lattice parameters, elastic constants, and bulk moduli agree with previous results. Debye temperatures deduced from elastic constants for ZnTe and MgTe are 758 and 585 K, respectively. 3) Soykan, . Kart, S. O. J. Alloy. 2012, 529, 148. doi: 1. 016/j. 170 (4) Drief, . Tadjer, . Mesri, . Aourag, H. Catal.
Поиск книг BookFi BookSee - Download books for free. 1. 4 Mb. The Physics of Low-Dimensional Semiconductors
Поиск книг BookFi BookSee - Download books for free. Narrow Gap Semiconductors 2007: Proceedings of the 13th International Conference, 8-12 July, 2007, Guildford, UK (Springer Proceedings in Physics, 119). Категория: Математика, Математическая физика. 1 Mb. The Physics of Semiconductors. The Physics of Low-Dimensional Semiconductors.